普适弛豫定律（影印版）

Preface
Acknowledgements
Useful Physical Constants
Chapter 1 THE MEANING OF UNIVERSALITY
1.1 The last twelve years
1.2 Basic definitions
1.3 Empirical response functions
1.4 Calculation of total polarisation
1.5 The nature of universality
1.6 Negative capacitance
1.7 Recovery of field on open-circuit Basic equations:
1.8 Energy loss in the time domain
1.9 Concluding comments
Appendix 1.1 Integration in Logarithmic Coordinates
Appendix 1.2 Values of n and cot(nπ/2)
References to chapter 1
Chapter 2 DIELECTTRIC RESPONSE OF SEMICONDUCTORS
2.1 Delayed electronic transitions
2.2 A simple barrier model
2.3 Response of Schottky diodes
Adventitious barriers on semi-insulating material
2.5 Response of p-n junctions
High-purity p-n junctions
Junctions with deep levels
Heavily doped Zener diodes
Conclusions regarding space charge region responses
2.5 Junction diffusion capacitance
a) Low-frequency response
b) High-frequency response
2.6 Volume trapping-detrapping
2.7 Hopping conduction
Electronic processes
Semi-insulating GaAs
Ionic Transport
2.8 Concluding comments
References to Chapter 2
Chapter 3 LUMINESCENCE AND PHOTOCONDUCTIVITY
3.1 The relevance of the subject
3.2 Idealised light emission rates
3.3 Analytical formulation
The limit of rapid trapping
3.4 Review of luminescence data
Exponential decays
Simple power law decays
More complex behaviours
3.5 Conclusions from luminescence
3.6 Photoconductivity in the F-D
Principles of photoconductive behaviour
Analytical formulation
3.7 Conclusions
References to Chapter 3
Chapter 4 "FLAS" DIELECTRIC RESPONSE
Chapter 5 LOW-FREQUENCY DISPERSION
Chapter 6 DC AND AC CONDUCTIVITY
Chapter 7 CHEMICAL REACTION DINETICS
Chapter 8 THERMALLY STIMULATED DEPOLARISATION
Chapter 9 MECHANICAL rELAXATION
Chapter 10 MEASUREMENT AND PRESENTATION OF DATA
Chapter 11 THEORETICAL INTERPRETATIONS
Chapter 12 THE ENERGY CRITERION
Author Index
Subject Index