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微电子专业英语

微电子专业英语

定 价:¥39.80

作 者: 吕红亮 编
出版社: 电子工业出版社
丛编项:
标 签: 电工电子

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ISBN: 9787121177606 出版时间: 2012-09-01 包装: 平装
开本: 16开 页数: 336 字数:  

内容简介

  本书以英文的形式介绍了微电子学和集成电路设计的相关技术。全书共分四部分:第一部分为半导体物理基础知识,包括晶格结构、能带结构、载流子浓度和输运等;第二部分介绍半导体器件物理基础理论,包括pn结、肖特基二极管、异质结二极管、双极型晶体管和场效应晶体管;第三部分简要阐述半导体集成电路的设计过程和设计方法;第四部分介绍半导体集成电路的制造工艺。本书可作为高等学校微电子学、集成电路设计及相关专业的“专业英语”课程的教材,也可作为从事微电子和集成电路相关科研和工程技术人员的参考书。

作者简介

暂缺《微电子专业英语》作者简介

图书目录

目 录
Session 1  Introduction to Semiconductor  
 1.1  What is Semiconductor 
 1.2  Classification of Semiconductor  
 Reading Materials 
Session 2  Crystal Structure  
 2.1  Primitive Cell and Crystal Plane  
 2.2  Atomic Bonding  
 Reading Materials  
Session 3  Band Model  
 3.1  Introduction to Quantum Mechanics 
 3.2  Band  
 3.3  Effective Mass Theory  
 Reading Materials 
Session 4  The Semiconductor in Equilibrium 
 4.1  Charge Carriers in Semiconductor 
 4.2  Intrinsic Semiconductor 
 4.3  Extrinsic Semiconductor  
 Reading Materials 
Session 5  Carrier Transport  
 5.1  Overview of Carrier Transport  
 5.2  Low Field Transport 
 5.3  High Field Transport  
 5.4  Diffusion Current  
Session 6  Nonequilibrium Excess Carriers in Semiconductor  
 6.1  Recombination  
 6.2  Minority Carrier Lifetime  
 6.3  Ambipolar Transport  
 Reading Materials
Session 7  The pn Junction (  Ⅰ  ) 
 7.1  Introduction  
 7.2  Basic Structure of the pn Junction  
 7.3  Energy Bands for a pn Junction 
 7.4  Ideal CurrentVoltage Relationship 
 7.5  Characteristics of a Practical Diode 
 Reading Materials  
Session 8  The pn Junction(  Ⅱ  ) 
 8.1  Breakdown in pn Junction  
 8.2  SmallSignal Diffusion Resistance of the pn Junction  
 8.3  Junction Capacitance 
 8.4  Diffusion or Storage Capacitance 
 8.5  Diode Transients  
 8.6  Circuit Models for Junction Diodes  
 Reading Materials  
Session 9  MetalSemiconductor Contacts  
 9.1  Schottky Contacts 
 9.2  Ohmic Contacts 
 Reading Materials  
Session 10  Heterojunctions  
 10.1  Strain and Stress at Heterointerfaces
 10.2  Heterojunction Materials 
 10.3  EnergyBand Diagrams  
 Reading Materials. 
Session 11  The Bipolar Junction Transistor (  Ⅰ  ) 
 11.1  The Bipolar Junction Transistor Construction 
 11.2  Transistor Action 
 11.3  Nonideal Effects 
 11.4  Base Resistance  
 Reading Materials  
Session 12  The Bipolar Junction Transistor (  Ⅱ  ) 
 12.1  Breakdown Voltage  
 12.2  Frequency Limits of BJT 
 12.3  The SchottkyClamped Transistor 
 12.4  Smallsignal Transistor Model 
 Reading Materials 
Session 13  Basics of MOSFETs 
 13.1  Introduction 
 13.2  General Characteristics of a MOSFET  
 13.3  MOS System  
 13.4  Work Function Differences  
 13.5  FlatBand Voltage  
 13.6  Threshold Voltage 
 Reading Materials  
Session 14  Nonideal Effects of MOSFETs 
 14.1  Introduction 
 14.2  Effective Mobility 
 14.3  Velocity Saturation  
 14.4  Channellength Modulation 
 14.5  DIBL 
 14.6  Hotcarrier Effect  
 14.7  GIDL  
 Reading Materials  
Session 15  Advanced MOSFET Devices  
 15.1  Introduction 
 15.2  Channel Doping Profile  
 15.3  Gate Stack  
 15.4  Source/Drain Design  
 15.5  SchottkyBarrier Source/Drain  
 15.6  Raised Source/Drain  
 15.7  SOI  
 15.8  Three Dimensional Structure  
 Reading Materials
Session 16  Introduction to Integrated Circuits
 16.1  Introduction  
 16.2  Size and Complexity of Integrated Circuits  
 16.3  Semiconductor Device for Integrated Circuits  
 16.4  IC Design Process  
 Reading Materials 
Session 17  Analog Integrated Circuits Design  
 17.1  Introduction 
 17.2  Analog Signal Processing  
 17.3  CMOS Technology  
 17.4  Amplifiers  
 17.5  Differential Amplifiers  
 17.6  Operational Amplifiers 
 17.7  Characterization of Op Amps 
 Reading Materials  
Session 18  Digital Integrated Circuits Design  
 18.1  Introduction  
 18.2  The Static CMOS Inverter  
 18.3  Designing Combinational Logic Gates in CMOS 
 Reading Materials  
Session 19  Radio Frequency Integrated Circuits Design 
 19.1  Introduction 
 19.2  RF System Performance Metrics  
 19.3  RF Transceiver Architectures 
 19.4  RF Passive Component

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