晶体生长手册2：熔体法晶体生长技术

　　《Springer手册精选系列·晶体生长手册（第2册）：熔体法晶体生长技术（影印版）》介绍体材料晶体的熔体生长，一种生长大尺寸晶体的关键方法。这一部分阐述了直拉单晶工艺、泡生法、布里兹曼法、浮区熔融等工艺，以及这些方法的最新进展，例如应用磁场的晶体生长、生长轴的取向、增加底基和形状控制。本部分涉及材料从硅和Ⅲ-V族化合物到氧化物和氟化物的广泛内容。

　　Govindhan Dhanaraj is the Manager of Crystal GrowthTechnologies at Advanced Renewable Energy Company （ARC Energy） atNashua， New Hampshire （USA） focusing on the growth of large sizesapphire crystals for LED lighting applications， characterizationand related crystal growth furnace development. He received his PhDfrom the Indian Institute of Science， Bangalore and his Master ofScience from Anna University （India）. Immediately after hisdoctoral degree， Dr. Dhanaraj joined a National Laboratory，presently known as Rajaramanna Center for Advanced Technology inIndia， where he established an advanced Crystal Growth Laboratoryfor the growth of optical and laser crystals. Prior to joining ARCEnergy， Dr. Dhanaraj served as a Research Professor at theDepartment of Materials Science and Engineering， Stony BrookUniversity， NY， and also held a position of Research AssistantProfessor at Hampton University， VA. During his 25 years of focusedexpertise in crystal growth research， he has developed optical，laser and semiconductor bulk crystals and SiC epitaxial films usingsolution， flux， Czochralski， Bridgeman， gel and vapor methods， andcharacterized them using x-ray topography， synchrotron topography，chemical etching and optical and atomic force microscopictechniques. He co-organized a symposium on Industrial CrystalGrowth under the 17th American Conference on Crystal Growth andEpitaxy in conjunction with the 14th US Biennial Workshop onOrganometallic Vapor Phase Epitaxy held at Lake Geneva， WIin 2009.Dr. Dhanaraj has delivered invited lectures and also served assession chairman in many crystal growth and materials sciencemeetings. He has published over 100 papers and his researcharticles have attracted over 250 rich citations.