Part Ⅰ Lateral Self-Alignment
1.1 General
1 Physical Mechanisms of Self-Organized Formation of Quantum Dots
2 Routes Toward Lateral Self-Organization of Quantum Dots: the Model System SiGe on Si(001)
1.2 Compact Lateral Quantum Dot Configurations
3 Short-Range Lateral Ordering of GeSi Quantum Dots Due to Elastic Interactions
4 Hierarchical Self-Assembly of Lateral Quantum-Dot Molecules Around Nanoholes
1.3 Ordering in Single Layers
5 Energetics and Kinetics of Self-Organized Structure Formation in Solution Growth - the SiGelSi System
6 Ge Quantum Dot Self-Alignment on Vicinal Substrates
7 Lateral Arrangement of Ge Self-Assembled Quantum Dots on a Partially Relaxed Si:cGei_x Buffer Layer
8 Ordering of Wires and Self-Assembled Dots on Vicinal Si and GaAs (110) Cleavage Planes
1.4 Ordering by Layer Stacking
9 Stacking and Ordering in Self-Organized Quantum Dot Multilayer Structures
10 Self-Organized Anisotropic Strain Engineering for Lateral Quantum Dot Ordering
11 Towards Quantum Dot Crystals via Multilayer Stackingon Different Indexed Surfaces
Part Ⅱ Forced Alignment
11.5 Growth on Shallow Modulated Surfaces
11.5.1 SiGe Islands
12 One-, Two-, and Three-Dimensionally Ordered GeSi Islands Grown on Prepatterned Si (001) Substrates
13 Ordered SiGe Island Arrays: Long Range Material Distribution and Possible Device Applications
14 Nanoscale Lateral Control of Ge Quantum Dot Nucleation Sites on Si(001) Using Focused Ion Beam Implantation
15 Ge Nanodroplets Self-Assembly on Focused Ion Beam Patterned Substrates
16 Metallization and Oxidation Templating of Sur facesfor Directed Island Assembly
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