微机电器件设计、制造及计算机辅助设计

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作　者：	郭占社
出版社：	北京航空航天大学出版社
丛编项：	京航空航天"研究生英文教材"系列丛书
标　签：	暂缺

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ISBN：	9787512421097	出版时间：	2016-06-01	包装：
开本：	16开	页数：		字数：

内容简介

　　Thisbookfirstlyintroducesthepertinentfundamentaltheory，importantmaterialandfabricationprocessofmicroＧelectromechanicalsystems．Basedonthesetheories，thedesignruleandimportantengineeringexamplesaredescribedindetail．Then，manyengineeringapplicationsforMEMSincludingtheaccelerationmeasurement，theangularspeedmeasurementandthepressuremeasurementareintroduced．Finally，finiteelementmethodisintroducedinordertoprovethecorrectnessofthedesign．Thisengineeringapplicationofsimulationincludesthestaticandmodalanalysisofthebeam，capacitanceanalysis，thermalＧstructureanalysisofthedeviceandfatigueanalysisetc．Itcanbeselectedasthereferencetothepostgraduates，undergraduatesandpertinentengineeringstaffwhoseresearch directionsareinstrumentationscienceandtechnology，controlscienceandengineering，mechanicalengineeringetc．

作者简介

暂缺《微机电器件设计、制造及计算机辅助设计》作者简介

图书目录

Chapter1　Introduction ………………………………………………………………………… 1
1．1　ConceptofMEMS ……………………………………………………………………… 1
1．2　DevelopmentofMEMS ………………………………………………………………… 4
1．3　MEMSCAD …………………………………………………………………………… 9
Chapter2　BasictheoryofMEMS …………………………………………………………… 12
2．1　TheoryofelectrostaticMEMScombactuators …………………………………… 12
2．1．1　Introduction ……………………………………………………………………… 12
2．1．2　Operatingprinciples …………………………………………………………… 13
2．1．3　Platecapacitortheoryinidealcondition ……………………………………… 14
2．1．4　ThemodifiedmodelofMEMSplatecapaciator ……………………………… 17
2．1．5　Calculationofelectrostaticcombdrivingforceinidealsituation …………… 24
2．1．6　Weakcapacitancedetectionmethodofelectrostaticcombdrive …………… 26
2．2　RelevanttheoreticalcalculationsfortheMEMScantileverbeam ………………… 34
2．2．1　Introduction ……………………………………………………………………… 34
2．2．2　Theoreticalcalculationmethodforcantileverbeam ………………………… 35
2．2．3　RelevanttheoreticalcalculationofaxialtensileandcompressiveonsingleGend
clampedbeams ………………………………………………………………… 36
2．2．4　RelatedtheoreticalcalculationsofdoubleGendclampedbeamsaxialtension
andcompression ………………………………………………………………… 40
2．3　MembranetheoryofMEMS ………………………………………………………… 47
2．3．1　Theoryofclampedaroundcirculardiaphragm ………………………………… 48
2．3．2　Theoryofclampedaroundrectangularflatdiaphragm ……………………… 49
References …………………………………………………………………………………… 52
Chapter3　MEMSmaterials …………………………………………………………………… 53
3．1　Monocrystallinesilicon ……………………………………………………………… 53
3．1．1　Introduction ……………………………………………………………………… 53
3．1．2　Crystalorientationofmonocrystallinesilicon ………………………………… 55
3．2　Polycrystallinesilicon ………………………………………………………………… 64
3．3　Silica …………………………………………………………………………………… 66
3．4　Piezoelectricmaterials ………………………………………………………………… 67
3．4．1　Piezoelectriceffectandinversepiezoelectriceffectofmaterials …………… 67
3．4．2　Quartzcrystal …………………………………………………………………… 68
3．4．3　Piezoelectricceramics …………………………………………………………… 73
3．5　OtherMEMSmaterials ……………………………………………………………… 75
3．6　Summary ……………………………………………………………………………… 76
Chapter4　MEMStechnology ………………………………………………………………… 77
4．1　MEMSlithographyprocess ………………………………………………………… 78
4．2　KeytechnologyofMEMSlithographyprocess …………………………………… 80
4．2．1　Wafercleaning …………………………………………………………………… 80
4．2．2　Siliconoxidation ………………………………………………………………… 80
4．2．3　Spincoatingprocess …………………………………………………………… 87
4．2．4　Prebaking ………………………………………………………………………… 90
4．2．5　Exposure ………………………………………………………………………… 92
4．2．6　Development ……………………………………………………………………… 94
4．2．7　Hardening ………………………………………………………………………… 96
4．2．8　FabricationoftheSiO2 window ………………………………………………… 97
4．3　SubsequentprocessofMEMS ……………………………………………………… 98
4．3．1　Bulksilicontechnology ………………………………………………………… 98
4．3．2　Surfacesiliconprocess ………………………………………………………… 103
4．3．3　LIGAtechnology ……………………………………………………………… 104
4．3．4　Sputteringtechnology ………………………………………………………… 105
4．3．5　LiftGoffprocess ………………………………………………………………… 107
4．4　Filmpreparationtechnology………………………………………………………… 107
4．5　Bondingprocess ……………………………………………………………………… 108
4．5．1　Anodicbondingprocess………………………………………………………… 109
4．5．2　SiliconGsilicondirectbonding ………………………………………………… 110
4．5．3　Metaleutecticbonding ………………………………………………………… 113
4．5．4　Coldpressureweldingbonding ……………………………………………… 114
4．6　Engineeringexamplesofcombinationformultipleprocessestofabricatethe
MEMSdevice ………………………………………………………………………… 115
4．6．1　Introduction …………………………………………………………………… 115
4．6．2　EngineeringexampleoffabricationprocessforresonantMEMSgyroscope
…………………………………………………………………………………… 115
4．6．3　EngineeringexampleofelectromagneticmicroGmotorproductionprocess
…………………………………………………………………………………… 118
4．7　Summary ……………………………………………………………………………… 124
References…………………………………………………………………………………… 125
Chapter5　Frictionwearandtearundermicroscale ……………………………………… 126
5．1　OffGchiptestingmethodformicrofriction ………………………………………… 127
5．1．1　MicroGtribologytestwiththepinGonGdiscmeasuringmethod ……………… 127
5．1．2　MicroGtribologytestwithAFM ……………………………………………… 128
5．1．3　MicroGtribologytestwithspecialmeasuringdevice ………………………… 130
5．2　OnGchiptestingmethodformicrofriction ………………………………………… 132
5．2．1　OnGchiptestingmethodactuatedbyelectrostaticforce …………………… 132
5．2．2　OnGchipmicroGfrictiontestingmethodusingthemechanismcharactersof
thebimorphmaterial…………………………………………………………… 139
5．3　ExampleofthedesignforanonGchipmicroGfrictionstructure ………………… 141
5．3．1　Structureandworkingprinciple ……………………………………………… 141
5．3．2　Calculationofpertinenttheory ……………………………………………… 142
5．3．3　Technologicalanalysisofstructuraldesign ………………………………… 148
5．3．4　Testingresultsanddataanalysis……………………………………………… 152
5．3．5　ResearchandtestofwearproblemofMEMSdevices ……………………… 161
5．4　Summary ……………………………………………………………………………… 165
References…………………………………………………………………………………… 165
Chapter6　MEMStestingtechnologyandengineeringapplication ………………………… 169
6．1　Accelerationmeasurementandcorrespondingsensors …………………………… 169
6．1．1　Workingprincipleoftheaccelerationsensorandtheclassification ……… 170
6．1．2　Capacitivesiliconmicromechanicalaccelerometer …………………………… 172
6．1．3　Piezoresistivesiliconmicromechanicalaccelerometer ……………………… 173
6．1．4　Piezoelectricmicromechanicalaccelerometer ………………………………… 174
6．1．5　ResonantsiliconMEMSaccelerometer ……………………………………… 175
6．2　Angularspeedmeasurementandcorrespondingsensors ………………………… 177
6．2．1　Workingprinciple ……………………………………………………………… 177
6．2．2　DevelopmentofMEMSgyroscope …………………………………………… 178
6．2．3　Classificationofmicromechanicalgyroscope ………………………………… 188
6．3　Pressuremeasurementandcorrespondingsensors ……………………………… 190
6．3．1　Workingpincinple ……………………………………………………………… 190
6．3．2　Resonantsiliconmicromechanicalpressuresensoranditsdevelopment … 193
6．4　MeasurementofmicroGtorque ……………………………………………………… 198
6．4．1　Introduction …………………………………………………………………… 198
6．4．2　Workingprincipleofnoncontactmethod …………………………………… 199
6．4．3　Theoreticalcalculation ………………………………………………………… 200
6．4．4　Correspondingequipmenttorealizethenoncontactmethod ……………… 205
6．4．5　Experimentresultanddiscussion …………………………………………… 209
6．5　Microscopicmorphologytestingmethod ………………………………………… 211
6．6　Summary ……………………………………………………………………………… 212
References…………………………………………………………………………………… 212
Chapter7　Applicationexamplesofthefiniteelementmethodinthedesignof
MEMSdevices …………………………………………………………………… 218
7．1　Importantconceptsofthesoftware………………………………………………… 218
7．2　IntroductionoftheAnsyssoftwareinterface……………………………………… 220
7．3　ThecoordinatesysteminAnsys …………………………………………………… 221
7．4　Engineeringexamples ……………………………………………………………… 226
7．4．1　StaticanalysisofsingleGclampedbeam ……………………………………… 226
7．4．2　ModalanalysisofdoubleGclampedbeam ……………………………………… 245
7．4．3　CapacitanceanalysisofMEMSelectrostaticcombfingersdrive …………… 257
7．4．4　Fatiguestrengthcalculationexample ………………………………………… 264
7．5　Summary ……………………………………………………………………………… 272